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1

Growth and Characterization of Heteroepitaxial Nickel Films on Diamond Substrates

Humphreys, T. P., Jeon, Hyeongtag, Nemanich, R. J., Posthill, J. B., Rudder, R. A., Malta, D. P., Hudson, G. C., Markunas, R. J., Hunn, J. D., Parikh, N. R.

Journal:

MRS Proceedings

Year:

1990

Language:

english

File:

PDF, 3.31 MB

english, 1990

2

Formation of diamond films from low pressure radio frequency induction discharges

R.A. Rudder, G.C. Hudson, R.C. Hendry, R.E. Thomas, J.B. Posthill, R.J. Markunas

Journal:

Surface and Coatings Technology

Year:

1992

Language:

english

File:

PDF, 498 KB

english, 1992

3

Demonstration of a method to fabricate a large-area diamond single crystal

J.B. Posthill, D.P. Malta, G.C. Hudson, R.E. Thomas, T.P. Humphreys, R.C. Hendry, R.A. Rudder, R.J. Markunas

Journal:

Thin Solid Films

Year:

1995

Language:

english

File:

PDF, 1.12 MB

english, 1995

4

An Automatic Data Handling System of High Speed and High Capacity

Sink, R. L., Pettingall, C. E., Posthill, B. N.

Journal:

IRE Transactions on Space Electronics and Telemetry

Year:

1959

Language:

english

File:

PDF, 1.18 MB

english, 1959

5

Single-crystal diamond plate liftoff achieved by ion implantation and subsequent annealing

Parikh, N. R., Hunn, J. D., McGucken, E., Swanson, M. L., White, C. W., Rudder, R. A., Malta, D. P., Posthill, J. B., Markunas, R. J.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 816 KB

english, 1992

6

The Impact of a Transitional Training Program for Young Adults with Learning Disabilities

Posthill, S. M., Roffman, A. J.

Journal:

Journal of Learning Disabilities

Year:

1991

Language:

english

File:

PDF, 2.40 MB

english, 1991

7

[IEEE ICT 2005. 24th International Conference on Thermoelectrics, 2005. - Clemson, SC, USA (2005.06.19-2005.06.23)] ICT 2005. 24th International Conference on Thermoelectrics, 2005. - High efficiency segmented bulk devices cascaded with high-performance superlattice cold-stage

Siivola, E., Thomas, P., Coonley, K., Reddy, A., Posthill, J., Cook, B., Venkatasubramanian, R.

Year:

2005

Language:

english

File:

PDF, 1.55 MB

english, 2005

8

Low-defect-density germanium on silicon obtained by a novel growth phenomenon

Malta, D. P., Posthill, J. B., Markunas, R. J., Humphreys, T. P.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 750 KB

english, 1992

9

Organometallic Vapor Phase Epitaxial Growth of ZnGeAs2 and (ZnGeAs2)xGe1−x on GaAs

Solomon, G. S., Posthill, J. B., Timmons, M. L.

Journal:

MRS Proceedings

Year:

1988

Language:

english

File:

PDF, 838 KB

english, 1988

10

Sample preparation technique for transmission electron microscopy of thin films on sapphire

M. K. Summerville, J. B. Posthill

Journal:

Microscopy Research and Technique

Year:

1989

Language:

english

File:

PDF, 195 KB

english, 1989

11

Organometallic chemical vapor deposition of epitaxial ZnGeP2 films on (001) GaP substrates

G.C. Xing, K.J. Bachmann, G.S. Solomon, J.B. Posthill, M.L. Timmons

Journal:

Journal of Crystal Growth

Year:

1989

Language:

english

File:

PDF, 641 KB

english, 1989

12

High quality GaAs on Si using Si0.04Ge0.96/Ge buffer layers

R. Venkatasubramanian, M.L. Timmons, J.B. Posthill, B.M. Keyes, R.K. Ahrenkiel

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 325 KB

english, 1991

13

A study of cracking in GaN grown on silicon by molecular beam epitaxy

R. Jothilingam, M. W. Koch, J. B. Posthill, G. W. Wicks

Journal:

Journal of Electronic Materials

Year:

2001

Language:

english

File:

PDF, 698 KB

english, 2001

14

Organometallic chemical vapor deposition and characterization of ZnGe−xSixP2-Ge alloys on GaP substrates

G.C. Xing, K.J. Bachmann, J.B. Posthill, M.L. Timmons

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 621 KB

english, 1991

15

Antiphase domain boundary formation in single‐crystal chalcopyrite‐structure ZnGeAs2 grown on GaAs

Solomon, G. S., Posthill, J. B., Timmons, M. L.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 643 KB

english, 1989

16

Matrix and interfacial precipitation in the W-Ni-Fe system

J. B. Posthill, D. V. Edmonds

Journal:

Metallurgical and Materials Transactions A

Year:

1986

Language:

english

File:

PDF, 5.70 MB

english, 1986

17

Growth of GaxIn1−xAsyP1−yusing ethyldimethylindium andt-butylphophine

P. R. Sharps, J. B. Posthill, M. L. Timmons

Journal:

Journal of Electronic Materials

Year:

1992

Language:

english

File:

PDF, 760 KB

english, 1992

18

The microstructural details of β-Sn precipitation in a 5Sn-95Pb solder alloy

D. R. Frear, J. B. Posthill, J. W. Morris

Journal:

Metallurgical and Materials Transactions A

Year:

1989

Language:

english

File:

PDF, 3.65 MB

english, 1989

19

Substrate effects on the epitaxial growth of ZnGeP2 thin films by open tube organometallic chemical vapor deposition

Xing, G. C., Bachmann, K. J., Posthill, J. B., Timmons, M. L.

Journal:

Journal of Applied Physics

Year:

1991

Language:

english

File:

PDF, 1.03 MB

english, 1991

20

[IEEE ICT 2005. 24th International Conference on Thermoelectrics, 2005. - Clemson, SC, USA (2005.06.19-2005.06.23)] ICT 2005. 24th International Conference on Thermoelectrics, 2005. - Portable power sources using combustion of butane and thermoelectrics

Posthill, J., Reddy, A., Siivola, E., Krueger, G., Mantini, M., Thomas, P., Venkatasubramanian, R., Ochoa, F., Ronney, P.

Year:

2005

Language:

english

File:

PDF, 792 KB

english, 2005

21

In situ cleaning of GaAs surfaces using hydrogen dissociated with a remote noble-gas discharge

Hattangady, S. V., Rudder, R. A., Mantini, M. J., Fountain, G. G., Posthill, J. B., Markunas, R. J.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 619 KB

english, 1990

22

Precipitation at Tungsten/Tungsten Interfaces in Tungsten–Nickel–Iron Heavy Alloys

Posthill, J. B., Hogwood, M. C., Edmonds, D. V.

Journal:

Powder Metallurgy

Year:

1986

Language:

english

File:

PDF, 1.67 MB

english, 1986

23

Deep-level dominated current-voltage characteristics of buried implanted oxide silicon-on-insulator

Das, K., Palmour, J.W., Posthill, J.B., Humphreys, T.P., O'Sullivan-French, J., Byrd, N.J., Lu, D., Wortman, J.J., Parikh, N.H.

Journal:

IEEE Electron Device Letters

Year:

1989

Language:

english

File:

PDF, 341 KB

english, 1989

24

[IEEE 2007 IEEE International Electron Devices Meeting - Washington, DC, USA (2007.12.10-2007.12.12)] 2007 IEEE International Electron Devices Meeting - Energy Harvesting for Electronics with Thermoelectric Devices using Nanoscale Materials

Venkatasubramanian, Rama, Watkins, Cynthia, Stokes, David, Posthill, John, Caylor, Chris

Year:

2007

Language:

english

File:

PDF, 2.52 MB

english, 2007

25

Growth and characterization of heteroepitaxial CdTe and ZnTe on Ge(001) buffer layers

Smith, David J., Tsen, S.-C. Y., Chen, Y. P., Sivananthan, S., Posthill, J. B.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 863 KB

english, 1996

26

High-pressure vapor transport of ZnGeP2

Xing, G. C., Bachmann, K. J., Posthill, J. B.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 515 KB

english, 1990

27

Cathodoluminescence from diamond films grown by plasma-enhanced chemical vapor deposition in dilute CO/H2, CF4/H2, and CH4/H2 mixtures

Graham, R. J., Posthill, J. B., Rudder, R. A., Markunas, R. J.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 682 KB

english, 1991

28

Epitaxial silicon deposition at 300 °C with remote plasma processing using SiH4/H2 mixtures

Hattangady, S. V., Posthill, J. B., Fountain, G. G., Rudder, R. A., Mantini, M. J., Markunas, R. J.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 738 KB

english, 1991

29

Characterization of epitaxial Ge films grown by remote plasma enhanced chemical vapor deposition on Ge(111) and GaAs(111) substrates

Year:

1989

Language:

english

File:

PDF, 1.02 MB

english, 1989

30

Method of fabricating a free-standing diamond single crystal using growth from the vapor phase

J. B. Posthill, D. P. Malta, T. P. Humphreys, G. C. Hudson, R. E. Thomas, R. A. Rudder, R. J. Markunas

Year:

1996

Language:

english

File:

PDF, 1.12 MB

english, 1996

31

Secondary electron emission enhancement and defect contrast from diamond following exposure to atomic hydrogen

D. P. Malta, J. B. Posthill, T. P. Humphreys, R. E. Thomas, G. G. Fountain, R. A. Rudder, G. C. Hudson, M. J. Mantini, R. J. Markunas

Year:

1994

Language:

english

File:

PDF, 777 KB

english, 1994

32

Heteroepitaxial growth and characterization of GaAs on silicon-on-sapphire and sapphire substrates

Humphreys, T. P., Miner, C. J., Posthill, J. B., Das, K., Summerville, M. K., Nemanich, R. J., Sukow, C. A., Parikh, N. R.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 685 KB

english, 1989

33

On the feasibility of growing dilute CxSi1−x epitaxial alloys

Posthill, J. B., Rudder, R. A., Hattangady, S. V., Fountain, G. G., Markunas, R. J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 603 KB

english, 1990

34

Observation of antiphase domain boundaries in GaAs on silicon by transmission electron microscopy

Posthill, J. B., Tarn, J. C. L., Das, K., Humphreys, T. P., Parikh, N. R.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 746 KB

english, 1988

35

Bipolar transistor with ion implanted, rapid thermal annealed base and semi-insulating polycrystalline silicon emitter

Ozguz, V. H., Posthill, J. B., Wortman, J. J., Littlejohn, M. A.

Journal:

Journal of Applied Physics

Year:

1988

Language:

english

File:

PDF, 1.38 MB

english, 1988

36

Optical investigation of strain and defects in (100) CdTe/Ge/Si and ZnTe/Ge/Si grown by molecular beam epitaxy

J. W. Hutchins, B. J. Skromme, Y. P. Chen, S. Sivananthan, J. B. Posthill

Year:

1997

Language:

english

File:

PDF, 344 KB

english, 1997

37

Erratum: Heteroepitaxial growth and characterization of GaAs on silicon-on-sapphire and sapphire substrates [Appl. Phys. Lett. 54, 1687 (1989)]

Year:

1989

Language:

english

File:

PDF, 290 KB

english, 1989

38

[IEEE 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC) - Waikoloa, HI, USA (5-9 Dec. 1994)] Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC) - Material and device characterization toward high-efficiency GaAs solar cells on optical-grade polycrystalline Ge substrates

Venkatasubramanian, R., Malta, D.P., Timmons, M.L., Posthill, J.B., Hutchby, J.A., Ahrenkiel, R., Keyes, B., Wangensteen, T.

Year:

1994

Language:

english

File:

PDF, 724 KB

english, 1994

39

Chemical vapor deposition of diamond films from water vapor rf-plasma discharges

Rudder, R. A., Hudson, G. C., Posthill, J. B., Thomas, R. E., Hendry, R. C., Malta, D. P., Markunas, R. J., Humphreys, T. P., Nemanich, R. J.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 669 KB

english, 1992

40

Erratum: High-pressure vapor transport of ZnGeP2 [Appl. Phys. Lett. 56, 271 (1990)]

Xing, G. C., Bachmann, K. J., Posthill, J. B.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 246 KB

english, 1990

41

Molecular-beam epitaxial growth and microstructural characterization of GaAs on Si with a buried implanted oxide

Das, K., Humphreys, T. P., Posthill, J. B., Tarn, J. C. L., Wortman, J. J., Parikh, N. R.

Journal:

Journal of Applied Physics

Year:

1988

Language:

english

File:

PDF, 781 KB

english, 1988

42

Assessment of GaAs heteroepitaxial films grown on silicon-on-sapphire upgraded by double solid phase epitaxy

Posthill, J. B., Markunas, R. J., Humphreys, T. P., Nemanich, R. J., Das, K., Parikh, N. R., Ross, P. L., Miner, C. J.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 597 KB

english, 1989

43

The role of atomic hydrogen and its influence on the enhancement of secondary electron emission from C(001) surfaces

Humphreys, T. P., Thomas, R. E., Malta, D. P., Posthill, J. B., Mantini, M. J., Rudder, R. A., Hudson, G. C., Markunas, R. J., Pettenkofer, C.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 266 KB

english, 1997

44

Below band-gap laser ablation of diamond for transmission electron microscopy

George, T., Foote, M. C., Vasquez, R. P., Fortier, E. P., Posthill, J. B.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 666 KB

english, 1993

45

Organometallic vapor-phase-epitaxial growth and characterization of ZnGeAs2 on GaAs

Solomon, G. S., Timmons, M. L., Posthill, J. B.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 815 KB

english, 1989

46

Direct deposition of polycrystalline diamond films on Si(100) without surface pretreatment

Rudder, R. A., Hudson, G. C., Posthill, J. B., Thomas, R. E., Markunas, R. J.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 603 KB

english, 1991

47

Impurity gettering by misfit dislocations in Si (2% Ge) epitaxy: nickel

Lee, D. M., Posthill, J. B., Shimura, F., Rozgonyi, G. A.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 660 KB

english, 1988

48

Growth of GaAs on High Temperature Hydrogen Pretreated (100) Si Substrates by Molecular Beam Epitaxy

Humphreys, T. P., Das, K., Posthill, J. B., Tarn, J. C. L., Jaing, B. L., Wortman, J. J., Parikh, N. R.

Journal:

Japanese Journal of Applied Physics

Year:

1988

File:

PDF, 1.92 MB

1988

49

Correlation of steady-state creep and changing microstructure in polycrystalline SiC sintered with powder derived via gaseous reactants in an are plasma

Nixon, R. D., Posthill, J. B., Davis, R. F., Baumgartner, H. R., Rossing, B. R.

Journal:

Journal of Materials Research

Year:

1988

Language:

english

File:

PDF, 6.81 MB

english, 1988

50

Etch-delineation of defects in diamond by exposure to an oxidizing flame

Malta, D.P., Posthill, J.B., Rudder, R.A., Hudson, G.C., Markunas, R.J.

Journal:

Journal of Materials Research

Year:

1993

Language:

english

File:

PDF, 657 KB

english, 1993